BZT55B12L1 datasheet, PDF - EEWORLD Datasheet

BZT55B12L1: DescriptionZener Diode, 12V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS, LS34, QUADRO MINIMELF-2; CategoryDiscrete semiconductor diode; File Size123KB，3 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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BZT55B12L1 Overview

Zener Diode, 12V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS, LS34, QUADRO MINIMELF-2

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	O-LELF-R2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	20 Ω
JEDEC-95 code	DO-213AA
JESD-30 code	O-LELF-R2
JESD-609 code	e3
Maximum knee impedance	90 Ω
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Nominal reference voltage	12 V
Maximum reverse current	0.1 µA
Reverse test voltage	9.1 V
surface mount	YES
technology	ZENER
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	30
Maximum voltage tolerance	2%
Working test current	5 mA

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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