NP48N055EHE datasheet, PDF - EEWORLD Datasheet

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NP48N055EHE: Description48A, 55V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZJ, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size77KB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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NP48N055EHE Overview

48A, 55V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZJ, 3 PIN

NP48N055EHE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	D2PAK
package instruction	TO-263, MP-25ZJ, 3 PIN
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	48 A
Maximum drain current (ID)	48 A
Maximum drain-source on-resistance	0.017 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	85 W
Maximum pulsed drain current (IDM)	140 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP48N055CHE,NP48N055DHE,NP48N055EHE,NP48N055KHE

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

These products are N-channel MOS Field Effect Transistor

designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

NP48N055CHE

NP48N055DHE

PACKAGE

TO-220AB

TO-262

TO-263 (MP-25ZJ)

TO-263 (MP-25ZK)

FEATURES

•

Channel temperature 175 degree rated

•

Super low on-state resistance

DS(on)

= 17 mΩ MAX. (V

= 10 V, I

= 24 A)

•

Low C

iss

: C

iss

= 1600 pF TYP.

•

Built-in gate protection diode

NP48N055EHE

NP48N055KHE

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Drain to Source Voltage (V

= 0 V)

Gate to Source Voltage (V

= 0 V)

Drain Current (DC) (T

= 25°C)

Drain Current (pulse)

Note1

Total Power Dissipation (T

= 25°C)

Total Power Dissipation (T

= 25°C)

Channel Temperature

Storage Temperature

Single Avalanche Current

Note2

Single Avalanche Energy

Note2

Notes 1.

≤

s, Duty cycle

≤

Starting T

= 25°C, R

= 25

Ω

, V

= 20

→

0 V (see Figure 4.)

DSS

GSS

D(DC)

D(pulse)

stg

±20

±48

±140

1.8

175

−55

to +175

48/28/10

2.3/78/100

°C

(TO-263)

(TO-262)

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

th(ch-C)

th(ch-A)

1.76

83.3

°C/W

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D14094EJ5V0DS00 (5th edition)

Date Published December 2002 NS CP(K)

Printed in Japan

The mark

shows major revised points.

1999, 2000

NP48N055EHE Related Products

	NP48N055EHE	NP48N055DHE	NP48N055DHE-AZ	NP48N055KHE	NP48N055KHE-AY	NP48N055KHE-AZ	NP48N055CHE
Description	48A, 55V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZJ, 3 PIN	48A, 55V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, MP-25 FIN CUT, 3 PIN	48A, 55V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, MP-25 FIN CUT, 3 PIN	48 A, 55 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZK, 3 PIN	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,48A I(D),TO-263AB	48A, 55V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZK, 3 PIN	48A, 55V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN
Is it Rohs certified?	incompatible	incompatible	conform to	incompatible	conform to	conform to	incompatible
Reach Compliance Code	unknown	unknown	compliant	compliant	compliant	compliant	unknown
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID)	48 A	48 A	48 A	48 A	48 A	48 A	48 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	85 W	85 W	85 W	85 W	85 W	85 W	85 W
surface mount	YES	NO	NO	YES	YES	YES	NO
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	-	-	-	Renesas Electronics Corporation
Parts packaging code	D2PAK	TO-262AA	TO-262AA	D2PAK	-	D2PAK	TO-220AB
package instruction	TO-263, MP-25ZJ, 3 PIN	TO-262, MP-25 FIN CUT, 3 PIN	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	-	SMALL OUTLINE, R-PSSO-G2	MP-25, 3 PIN
Contacts	4	3	3	4	-	4	3
ECCN code	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ	100 mJ	100 mJ	-	100 mJ	100 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	-	DRAIN	DRAIN
Minimum drain-source breakdown voltage	55 V	55 V	55 V	55 V	-	55 V	55 V
Maximum drain current (ID)	48 A	48 A	48 A	48 A	-	48 A	48 A
Maximum drain-source on-resistance	0.017 Ω	0.017 Ω	0.017 Ω	0.017 Ω	-	0.017 Ω	0.017 Ω
JEDEC-95 code	TO-263AB	TO-262AA	TO-262AA	TO-263AB	-	TO-263AB	TO-220AB
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	-	R-PSSO-G2	R-PSFM-T3
JESD-609 code	e0	e0	-	e0	-	-	e0
Number of components	1	1	1	1	-	1	1
Number of terminals	2	3	3	2	-	2	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	-	SMALL OUTLINE	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	260	NOT SPECIFIED	-	260	NOT SPECIFIED
Maximum pulsed drain current (IDM)	140 A	140 A	140 A	140 A	-	140 A	140 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	TIN LEAD	-	-	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	-	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON
Is Samacsys	-	N	N	N	N	N	-
Base Number Matches	-	1	1	1	1	1	-

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