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S14C24-8-G

Description
Trans Voltage Suppressor Diode, 300W, 24V V(RWM), Bidirectional, 10 Element, Silicon, ROHS COMPLIANT, SO-14 PACKAGE, 14 PIN
CategoryDiscrete semiconductor    diode   
File Size113KB,3 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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S14C24-8-G Overview

Trans Voltage Suppressor Diode, 300W, 24V V(RWM), Bidirectional, 10 Element, Silicon, ROHS COMPLIANT, SO-14 PACKAGE, 14 PIN

S14C24-8-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PDSO-G14
Reach Compliance Codeunknown
Minimum breakdown voltage26.7 V
ConfigurationCOMMON ANODE, 10 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G14
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation300 W
Number of components10
Number of terminals14
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage24 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

S14C24-8-G Related Products

S14C24-8-G S14C15-8-G S14C03-8-G S14C12-8-G
Description Trans Voltage Suppressor Diode, 300W, 24V V(RWM), Bidirectional, 10 Element, Silicon, ROHS COMPLIANT, SO-14 PACKAGE, 14 PIN Trans Voltage Suppressor Diode, 300W, 15V V(RWM), Bidirectional, 10 Element, Silicon, ROHS COMPLIANT, SO-14 PACKAGE, 14 PIN Trans Voltage Suppressor Diode, 300W, 3.3V V(RWM), Bidirectional, 10 Element, Silicon, ROHS COMPLIANT, SO-14 PACKAGE, 14 PIN Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 10 Element, Silicon, ROHS COMPLIANT, SO-14 PACKAGE, 14 PIN
Is it Rohs certified? conform to conform to conform to conform to
Maker Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd.
package instruction R-PDSO-G14 R-PDSO-G14 R-PDSO-G14 R-PDSO-G14
Reach Compliance Code unknown unknown unknown unknown
Minimum breakdown voltage 26.7 V 16.7 V 4 V 13.3 V
Configuration COMMON ANODE, 10 ELEMENTS COMMON ANODE, 10 ELEMENTS COMMON ANODE, 10 ELEMENTS COMMON ANODE, 10 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-PDSO-G14 R-PDSO-G14 R-PDSO-G14 R-PDSO-G14
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak reverse power dissipation 300 W 300 W 300 W 300 W
Number of components 10 10 10 10
Number of terminals 14 14 14 14
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
polarity BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 24 V 15 V 3.3 V 12 V
surface mount YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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