SIGC42T60UN datasheet, PDF - EEWORLD Datasheet

SIGC42T60UN: DescriptionHigh Speed IGBT Chip in NPT-technology positive temperature coefficient easy paralleling; CategoryDiscrete semiconductor The transistor; File Size61KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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SIGC42T60UN Overview

High Speed IGBT Chip in NPT-technology positive temperature coefficient easy paralleling

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N3
Contacts	3
Reach Compliance Code	compli
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	S-XUUC-N3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	370 ns
Nominal on time (ton)	79 ns
Base Number Matches	1

	SIGC42T60UN	SIGC42T60UNX1SA1
Description	High Speed IGBT Chip in NPT-technology positive temperature coefficient easy paralleling	Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.5 X 6.5 MM, DIE-3
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
Parts packaging code	DIE	DIE
package instruction	UNCASED CHIP, S-XUUC-N3	UNCASED CHIP, S-XUUC-N3
Contacts	3	3
Reach Compliance Code	compli	compliant
Maximum collector current (IC)	50 A	50 A
Collector-emitter maximum voltage	600 V	600 V
Configuration	SINGLE	SINGLE
JESD-30 code	S-XUUC-N3	S-XUUC-N3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE
Package form	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON
Nominal off time (toff)	370 ns	370 ns
Nominal on time (ton)	79 ns	79 ns

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