Dual-Port SRAM, 1KX8, 25ns, CMOS, CDIP48, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | IDT (Integrated Device Technology) |
Parts packaging code | DIP |
package instruction | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48 |
Contacts | 48 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Maximum access time | 25 ns |
Other features | BATTERY BACK-UP |
I/O type | COMMON |
JESD-30 code | R-CDIP-T48 |
JESD-609 code | e0 |
length | 60.96 mm |
memory density | 8192 bit |
Memory IC Type | DUAL-PORT SRAM |
memory width | 8 |
Number of functions | 1 |
Number of ports | 2 |
Number of terminals | 48 |
word count | 1024 words |
character code | 1000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 1KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP48,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 225 |
power supply | 5 V |
Certification status | Not Qualified |
Maximum seat height | 4.826 mm |
Maximum standby current | 0.0015 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.18 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 20 |
width | 15.24 mm |