BSC118N10NSG datasheet, PDF - EEWORLD Datasheet

BSC118N10NSG: Description11 A, 100 V, 0.0118 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size438KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSC118N10NSG Overview

11 A, 100 V, 0.0118 ohm, N-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F5
Contacts	8
Reach Compliance Code	_compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	155 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	71 A
Maximum drain current (ID)	11 A
Maximum drain-source on-resistance	0.0118 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	114 W
Maximum pulsed drain current (IDM)	280 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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