US1D datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> Super fast recovery diode> US1D

US1D: DescriptionReverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 1A Forward voltage drop (Vf): 1V @ 1A 200V, 1A, VF=1V@1A; CategoryDiscrete semiconductor Super fast recovery diode; File Size393KB，3 Pages; ManufacturerShenzhen Heketai Electronics Co., Ltd.; Websitehttp://www.heketai.com; Founded in 1992, Hekotech is a high-tech innovative enterprise specializing in the R&D, design, packaging, testing, production and sales of semiconductor analog chips and discrete devices. The product line includes lithium battery protection IC, charging management IC, LDO, MOSFET, diode, TVS, bridge stack, triode and other discrete devices and integrated circuits, providing customers with application solutions and on-site technical support services. The company has ISO9001, ISO14001, IATF16949 quality system certification. The products include semiconductors and passive components, which are widely used in power supply, lighting, medical electronics, small appliances, communications, security, instruments, industrial control, automotive electronics and other fields.

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US1D Overview

Reverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 1A Forward voltage drop (Vf): 1V @ 1A 200V, 1A, VF=1V@1A

US1D Parametric

Parameter Name	Attribute value
Reverse recovery time (trr)	50ns
DC reverse withstand voltage (Vr)	200V
Average rectified current (Io)	1A
Forward voltage drop (Vf)	1V @ 1A

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