|
IRFR4620PBF |
IRFR4620TRPBF |
IRFU4620PBF |
Description |
24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
Is it lead-free? |
Lead free |
Lead free |
Lead free |
Is it Rohs certified? |
conform to |
conform to |
conform to |
Parts packaging code |
TO-252AA |
TO-252AA |
TO-251AA |
package instruction |
SMALL OUTLINE, R-PSSO-G2 |
SMALL OUTLINE, R-PSSO-G2 |
ROHS COMPLIANT, IPAK-3 |
Contacts |
3 |
3 |
3 |
Reach Compliance Code |
compli |
compliant |
_compli |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
Avalanche Energy Efficiency Rating (Eas) |
113 mJ |
113 mJ |
113 mJ |
Shell connection |
DRAIN |
DRAIN |
DRAIN |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
200 V |
200 V |
200 V |
Maximum drain current (Abs) (ID) |
24 A |
24 A |
24 A |
Maximum drain current (ID) |
24 A |
24 A |
24 A |
Maximum drain-source on-resistance |
0.078 Ω |
0.078 Ω |
0.078 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code |
TO-252AA |
TO-252AA |
TO-251AA |
JESD-30 code |
R-PSSO-G2 |
R-PSSO-G2 |
R-PSIP-T3 |
JESD-609 code |
e3 |
e3 |
e3 |
Humidity sensitivity level |
1 |
1 |
1 |
Number of components |
1 |
1 |
1 |
Number of terminals |
2 |
2 |
3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
175 °C |
175 °C |
175 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
IN-LINE |
Peak Reflow Temperature (Celsius) |
260 |
260 |
260 |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
144 W |
144 W |
144 W |
Maximum pulsed drain current (IDM) |
100 A |
100 A |
100 A |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
YES |
YES |
NO |
Terminal surface |
MATTE TIN OVER NICKEL |
MATTE TIN OVER NICKEL |
Matte Tin (Sn) - with Nickel (Ni) barrie |
Terminal form |
GULL WING |
GULL WING |
THROUGH-HOLE |
Terminal location |
SINGLE |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
30 |
30 |
30 |
transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
SILICON |
Base Number Matches |
1 |
- |
1 |