SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Allowed number of short circuits: <1000; time between
short circuits: >1s.
•
lower
E
off
compared to previous generation
•
Short circuit withstand time – 10
µs
•
Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
•
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
•
Pb-free lead plating; RoHS compliant
1
•
Qualified according to JEDEC for target applications
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
C
G
E
PG-TO-263-3-2
Type
SKB02N120
Maximum Ratings
Parameter
V
CE
1200V
I
C
2A
E
off
0.11mJ
T
j
150°C
Marking
K02N120
Package
PG-TO-263-3-2
Symbol
V
CE
I
C
Value
1200
6.2
2.8
Unit
V
A
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature, reflow soldering, MSL1
2
I
Cpul s
-
I
F
9.6
9.6
4.5
2
I
Fpul s
V
GE
t
SC
P
tot
T
j
,
T
stg
T
s
9
±20
10
62
-55...+150
245
V
µs
W
°C
V
GE
= 15V, 100V≤V
CC
≤1200V,
T
j
≤
150°C
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3
Oct 07
Power Semiconductors
SKB02N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 1 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
=2A
T
j
=2 5
°C
T
j
=1 5 0° C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 2 A
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 10 0
µA
,
V
C E
=
V
G E
V
C E
= 12 0 0V ,
V
G E
= 0V
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
R
thJC
R
thJCD
Conditions
Max. Value
2.0
4.5
Unit
K/W
Symbol
Conditions
Value
min.
1200
2.5
-
typ.
-
3.1
3.7
2.0
-
3
-
-
-
1.75
4
-
-
-
1.5
-
-
-
-
-
205
28
12
11
7
24
5
max.
-
3.6
4.3
2.5
Unit
V
µA
25
100
100
-
250
34
15
-
-
-
nC
nH
A
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
=2A
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 96 0 V,
I
C
=2A
V
G E
= 15 V
V
G E
= 15 V ,t
S C
≤
10
µs
10 0 V≤
V
C C
≤
12 0 0 V,
T
j
≤
1 5 0° C
-
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3
Oct 07
Power Semiconductors
SKB02N120
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
°C
,
V
R
= 8 00 V ,
I
F
= 2 A,
d i
F
/ d t
=2 5 0 A/
µs
-
-
-
-
-
-
0.10
4.2
400
µC
A
A/µs
50
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 80 0 V,
I
C
= 2A,
V
G E
= 15 V /0 V ,
R
G
= 91
Ω,
1)
L
σ
=1 8 0n H,
1)
C
σ
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
23
16
260
61
0.16
0.06
0.22
30
21
340
80
0.21
0.08
0.29
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
1)
Symbol
Conditions
Value
min.
-
-
-
-
-
-
-
typ.
26
14
290
85
0.27
0.11
0.38
max.
31
17
350
102
0.33
0.15
0.48
Unit
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C
V
C C
= 80 0 V,
I
C
=2A ,
V
G E
= 15 V /0 V ,
R
G
= 91
Ω,
1)
L
σ
=1 8 0n H,
1)
C
σ
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
T
j
=1 5 0° C
V
R
= 8 00 V ,
I
F
= 2 A,
d i
F
/ d t
=3 0 0 A/
µs
ns
mJ
-
-
-
-
-
-
90
ns
Q
rr
I
rrm
d i
r r
/d t
0.30
6.7
110
µC
A
A/µs
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2.3
Oct 07
SKB02N120
12A
I
c
10A
t
p
=10
µ
s
10A
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
8A
T
C
=80°C
6A
T
C
=110°C
4A
1A
50
µ
s
150
µ
s
500
µ
s
0.1A
20ms
DC
2A
I
c
0.01A
0A
10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 91Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
7A
60W
6A
50W
5A
4A
3A
2A
1A
0A
25°C
40W
30W
20W
10W
0W
25°C
I
C
,
COLLECTOR CURRENT
P
tot
,
POWER DISSIPATION
50°C
75°C
100°C
125°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
4
Rev. 2.3
Oct 07
SKB02N120
7A
6A
5A
4A
3A
2A
1A
0A
0V
V
GE
=17V
15V
13V
11V
9V
7V
7A
6A
5A
4A
3A
2A
1A
0A
0V
V
GE
=17V
15V
13V
11V
9V
7V
I
C
,
COLLECTOR CURRENT
1V
2V
3V
4V
5V
6V
7V
I
C
,
COLLECTOR CURRENT
1V
2V
3V
4V
5V
6V
7V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
6A
5A
4A
3A
2A
1A
0A
3V
T
j
=+150°C
T
j
=+25°C
T
j
=-40°C
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
7A
6V
5V
I
C
=4A
I
C
,
COLLECTOR CURRENT
4V
I
C
=2A
3V
I
C
=1A
2V
1V
5V
7V
9V
11V
0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 20V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev. 2.3
Oct 07
京公网安备 11010802033920号
EEWORLD
