STGB18N40LZ datasheet, PDF - EEWORLD Datasheet

STGB18N40LZ: Description25 A, 420 V, N-CHANNEL IGBT, TO-252; Categorysemiconductor Discrete semiconductor; File Size860KB，25 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STGB18N40LZ Overview

25 A, 420 V, N-CHANNEL IGBT, TO-252

Parameter Name	Attribute value
Number of terminals	2
Rated off time	22200 ns
Maximum collector current	25 A
Maximum Collector-Emitter Voltage	420 V
Processing package description	ROHS COMPLIANT, DPAK-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	SINGLE WITH BUILT-IN diode AND resistor
Shell connection	COLLECTOR
Number of components	1
transistor applications	AUTOMOTIVE IGNITION
Transistor component materials	silicon
Channel type	N channel
Transistor type	INSULATED GATE BIPOLAR
Rated on time	4450 ns

	STGB18N40LZ	STGD18N40LZ	STGB18N40LZ_09
Description	25 A, 420 V, N-CHANNEL IGBT, TO-252	25 A, 420 V, N-CHANNEL IGBT, TO-252	25 A, 420 V, N-CHANNEL IGBT, TO-252
Number of terminals	2	2	2
Rated off time	22200 ns	22200 ns	22200 ns
Maximum collector current	25 A	25 A	25 A
Maximum Collector-Emitter Voltage	420 V	420 V	420 V
Processing package description	ROHS COMPLIANT, DPAK-3	ROHS COMPLIANT, DPAK-3	ROHS COMPLIANT, DPAK-3
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING
terminal coating	MATTE Tin	MATTE Tin	MATTE Tin
Terminal location	single	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	SINGLE WITH BUILT-IN diode AND resistor	SINGLE WITH BUILT-IN diode AND resistor	SINGLE WITH BUILT-IN diode AND resistor
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Number of components	1	1	1
transistor applications	AUTOMOTIVE IGNITION	AUTOMOTIVE IGNITION	AUTOMOTIVE IGNITION
Transistor component materials	silicon	silicon	silicon
Channel type	N channel	N channel	N channel
Transistor type	INSULATED GATE BIPOLAR	INSULATED GATE BIPOLAR	INSULATED GATE BIPOLAR
Rated on time	4450 ns	4450 ns	4450 ns

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