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S9014-C3-BP

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size124KB,1 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance  
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S9014-C3-BP Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3

S9014-C3-BP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
MCC
Features
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
S9014
TO-92 Plastic-Encapsulate Transistors
Capable of 0.4Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 0.1A
Collector-base Voltage 50V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking Code: S9014
NPN Silicon
Transistors
TO-92
A
E
Pin Configuration
C
BE
B
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=50Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=35Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=3.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0mAdc, V
CE
=5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=5.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=5.0mAdc)
Transistor Frequency
(I
C
=10mAdc, V
CE
=5.0Vdc, f=30MHz)
Min
50
45
5.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
D
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
C
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
60
---
---
1000
0.3
1.0
---
Vdc
Vdc
G
DIMENSIONS
SMALL-SIGNAL CHARACTERISTICS
f
T
150
---
MHz
DIM
A
B
C
D
E
G
MIN
.175
.175
.500
.016
.135
.095
INCHES
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
CLASSIFICATION OF H
FE (1)
Rank
Range
A
60-150
B
120-200
C1
200-300
C2
300-400
C3
400-500
D
500-1000
MAX
.185
.185
---
.020
.145
.105
www.mccsemi.com
Revision: 2
2003/06/30

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Description Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
Is it Rohs certified? conform to incompatible conform to incompatible conform to conform to incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V 45 V 45 V 45 V 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 400 60 60 400 300 200 200 300
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e3 e0 e3 e0 e3 e3 e0 e0
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal surface MATTE TIN Tin/Lead (Sn/Pb) MATTE TIN TIN LEAD MATTE TIN MATTE TIN TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Is it lead-free? Lead free - Lead free Contains lead Lead free Lead free - -
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