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V6P22CHM3/I

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size99KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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V6P22CHM3/I Overview

Rectifier Diode,

V6P22CHM3/I Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknown
Factory Lead Time22 weeks
Diode typeRECTIFIER DIODE
V6P22C
www.vishay.com
Vishay General Semiconductor
High Current Density Surface-Mount
TMBS
®
(Trench MOS Barrier Schottky) Rectifier
Ultra Low V
F
= 0.61 V at I
F
= 1.5 A
eSMP
®
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
2
SMPC
(TO-277A)
K
Cathode
Anode 1
Anode 2
ADDITIONAL RESOURCES
D
D
3
3
3D Models
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 3 A
T
J
max.
Package
Circuit configuration
2 x 3.0 A
200 V
70 A
0.68 V
175 °C
SMPC (TO-277A)
Common cathode
Case:
SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current per device (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction temperature range
Storage temperature range
V
RRM
I
F(AV) (1)
I
F(AV)
(2)
SYMBOL
V6P22C
V622C
200
6.0
3.0
70
-40 to +175
-55 to +175
UNIT
V
A
A
°C
°C
I
FSM
T
J (3)
T
J
, T
STG
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2)
Free air, mounted on recommended pad area
(3)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
Revision: 14-Oct-2019
Document Number: 87000
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

V6P22CHM3/I Related Products

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Description Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode,
Maker Vishay Vishay Vishay Vishay
Reach Compliance Code unknown unknown unknown unknown
Factory Lead Time 22 weeks 22 weeks 22 weeks 22 weeks
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
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