V6P22C
www.vishay.com
Vishay General Semiconductor
High Current Density Surface-Mount
TMBS
®
(Trench MOS Barrier Schottky) Rectifier
Ultra Low V
F
= 0.61 V at I
F
= 1.5 A
eSMP
®
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
2
SMPC
(TO-277A)
K
Cathode
Anode 1
Anode 2
ADDITIONAL RESOURCES
D
D
3
3
3D Models
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 3 A
T
J
max.
Package
Circuit configuration
2 x 3.0 A
200 V
70 A
0.68 V
175 °C
SMPC (TO-277A)
Common cathode
Case:
SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current per device (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction temperature range
Storage temperature range
V
RRM
I
F(AV) (1)
I
F(AV)
(2)
SYMBOL
V6P22C
V622C
200
6.0
3.0
70
-40 to +175
-55 to +175
UNIT
V
A
A
°C
°C
I
FSM
T
J (3)
T
J
, T
STG
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2)
Free air, mounted on recommended pad area
(3)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
Revision: 14-Oct-2019
Document Number: 87000
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V6P22C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 1.5 A
Instantaneous forward voltage
per diode
I
F
= 3.0 A
I
F
= 1.5 A
I
F
= 3.0 A
V
R
= 160 V
Reverse current per diode
V
R
= 200 V
Typical junction capacitance per diode
4.0 V, 1 MHz
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
C
J
I
R (2)
SYMBOL
TYP.
0.79
0.83
0.61
0.68
0.001
0.3
-
0.7
130
MAX.
-
0.89
-
0.76
-
-
0.06
3.5
-
pF
mA
V
UNIT
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise specified)
PARAMETER
Typical thermal resistance per device
SYMBOL
R
JA
(1)(2)
V6P22C
85
5
UNIT
°C/W
R
JM
(3)
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2)
Free air, mounted on recommended copper pad area, 2 oz., FR4 PCB, thermal resistance R
- junction-to-ambient
JA
(3)
Units mounted on 30 mm x 30 mm aluminum PCB, thermal resistance R
JM
- junction-to-mount
ORDERING INFORMATION
(Example)
PREFERRED P/N
V6P22C-M3/H
V6P22C-M3/I
V6P22CHM3/H
V6P22CHM3/I
(1)
(1)
UNIT WEIGHT (g)
0.10
0.10
0.10
0.10
PACKAGE CODE
H
I
H
I
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 14-Oct-2019
Document Number: 87000
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V6P22C
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C
unless otherwise noted)
Axis Title
8
2nd line
Average Forward Rectified Current (A)
R
thJM
= 5 °C/W
Axis Title
10000
Instantaneous Reverse Current (mA)
2nd line
100
10
1
0.1
0.01
0.001
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 150 °C
T
J
= 175 °C
10000
6
1000
1st line
2nd line
4
R
thJA
= 85 °C/W
1000
1st line
2nd line
100
10
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
10000
T
J
= 25 °C,
f = 1.0 MHz,
V
sig
= 50 mV
p-p
100
2
T
M
measured at cathode
terminal mount typical values
0.0001
T
J
= -40 °C
0.00001
0
0
10
125
150
175
0.000001
25
50
75
100
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Axis Title
2.4
2.2
2.0
2nd line
Average Power Loss (W)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
2.5
3
3.5
Average Forward Current (A)
D = t
p
/T
t
p
T
Axis Title
10000
D = 0.8
1000
D = 0.5
D = 0.3
D = 0.2
D = 1.0
1000
1st line
2nd line
2nd line
Junction Capacitance (pF)
100
1000
1st line
2nd line
D = 0.1
100
10
100
10
1
0.1
1
10
100
Reverse Voltage (V)
10
1000
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Axis Title
10
T
J
= 175 °C
Axis Title
10000
2nd line
Transient Thermal Impedance (°C/W)
100
Junction-to-ambient
10000
2nd line
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
1000
1000
10
100
1st line
2nd line
10
0.1
1
10
100
t - Pulse Duration (s)
1
T
J
= 100 °C
100
T
J
= 25 °C
T
J
= -40 °C
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Instantaneous Forward Voltage (V)
10
1
0.01
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance
Revision: 14-Oct-2019
Document Number: 87000
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V6P22C
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMPC
(TO-277A)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
Vishay General Semiconductor
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.268
(6.80)
0.186 (4.72)
MIN.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
Conform to JEDEC
®
TO-277A
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
Revision: 14-Oct-2019
Document Number: 87000
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000