Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | TT Electronics plc |
package instruction | HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 8 A |
Collector-emitter maximum voltage | 80 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 30 |
JEDEC-95 code | TO-276AB |
JESD-30 code | R-CBCC-N3 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | PNP |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 2.5 MHz |