Power Field-Effect Transistor, 21A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAC-5
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | IXYS |
| package instruction | ISOPLUS, I4PAC-5 |
| Contacts | 5 |
| Reach Compliance Code | compliant |
| Other features | HIGH RELIABILITY |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V |
| Maximum drain current (Abs) (ID) | 21 A |
| Maximum drain current (ID) | 21 A |
| Maximum drain-source on-resistance | 0.22 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSIP-T5 |
| JESD-609 code | e1 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| FDM21-05QC | FMD21-05QC | |
|---|---|---|
| Description | Power Field-Effect Transistor, 21A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAC-5 | Power Field-Effect Transistor, 21A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAC-5 |
| Is it lead-free? | Lead free | Lead free |
| Is it Rohs certified? | conform to | conform to |
| Maker | IXYS | IXYS |
| package instruction | ISOPLUS, I4PAC-5 | ISOPLUS, I4PAC-5 |
| Contacts | 5 | 5 |
| Reach Compliance Code | compliant | compliant |
| Other features | HIGH RELIABILITY | HIGH RELIABILITY |
| Shell connection | ISOLATED | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V | 500 V |
| Maximum drain current (Abs) (ID) | 21 A | 21 A |
| Maximum drain current (ID) | 21 A | 21 A |
| Maximum drain-source on-resistance | 0.22 Ω | 0.22 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSIP-T5 | R-PSIP-T5 |
| JESD-609 code | e1 | e1 |
| Number of components | 1 | 1 |
| Number of terminals | 5 | 5 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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