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K8F5615EBM-DE1F0

Description
Flash, 16MX16, 100ns, PBGA88, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-88
Categorystorage    storage   
File Size1MB,59 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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K8F5615EBM-DE1F0 Overview

Flash, 16MX16, 100ns, PBGA88, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-88

K8F5615EBM-DE1F0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSAMSUNG
Parts packaging codeBGA
package instruction8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-88
Contacts88
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time100 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B88
JESD-609 codee1
length11 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Humidity sensitivity level2
Number of functions1
Number of departments/size4,255
Number of terminals88
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA88,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size16K,64K
Maximum standby current0.00002 A
Maximum slew rate0.055 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width8 mm
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