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BD825-10

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size205KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BD825-10 Overview

Transistor

BD825-10 Parametric

Parameter NameAttribute value
MakerInfineon
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)25
Maximum operating temperature140 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)8 W
surface mountNO
Nominal transition frequency (fT)50 MHz

BD825-10 Related Products

BD825-10 BD827 BD827-10 BD829-10 BD825
Description Transistor Transistor, Transistor Transistor Transistor,
Maker Infineon Infineon Infineon Infineon Infineon
Reach Compliance Code compliant compliant compliant compliant not_compliant
Maximum collector current (IC) 1.5 A 1 A 2 A 2 A 1 A
Configuration Single Single Single Single Single
Maximum operating temperature 140 °C 150 °C 125 °C 125 °C 150 °C
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 8 W 2 W 8 W 8 W 2 W
surface mount NO NO NO NO NO
Nominal transition frequency (fT) 50 MHz 250 MHz 50 MHz 50 MHz 250 MHz
Minimum DC current gain (hFE) 25 40 - - 40
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