Transistor,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Infineon |
Reach Compliance Code | not_compliant |
Maximum collector current (IC) | 1 A |
Configuration | Single |
Minimum DC current gain (hFE) | 40 |
JESD-609 code | e0 |
Maximum operating temperature | 150 °C |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 2 W |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Nominal transition frequency (fT) | 250 MHz |
BD825 | BD827 | BD827-10 | BD825-10 | BD829-10 | |
---|---|---|---|---|---|
Description | Transistor, | Transistor, | Transistor | Transistor | Transistor |
Maker | Infineon | Infineon | Infineon | Infineon | Infineon |
Reach Compliance Code | not_compliant | compliant | compliant | compliant | compliant |
Maximum collector current (IC) | 1 A | 1 A | 2 A | 1.5 A | 2 A |
Configuration | Single | Single | Single | Single | Single |
Maximum operating temperature | 150 °C | 150 °C | 125 °C | 140 °C | 125 °C |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN |
Maximum power dissipation(Abs) | 2 W | 2 W | 8 W | 8 W | 8 W |
surface mount | NO | NO | NO | NO | NO |
Nominal transition frequency (fT) | 250 MHz | 250 MHz | 50 MHz | 50 MHz | 50 MHz |
Minimum DC current gain (hFE) | 40 | 40 | - | 25 | - |