GS81302DT11GE-350T datasheet, PDF

GS81302DT11GE-350T: DescriptionQDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165; Categorystorage storage; File Size453KB，31 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/; Environmental Compliance

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GS81302DT11GE-350T Overview

QDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	GSI Technology
Parts packaging code	BGA
package instruction	FPBGA-165
Contacts	165
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
length	17 mm
memory density	150994944 bit
Memory IC Type	QDR SRAM
memory width	9
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX9
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.5 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15 mm

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