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J106L-18

Description
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
CategoryDiscrete semiconductor    The transistor   
File Size143KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

J106L-18 Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA

J106L-18 Parametric

Parameter NameAttribute value
MakerVishay
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum drain-source on-resistance6 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)35 pF
JEDEC-95 codeTO-226AA
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.36 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON

J106L-18 Related Products

J106L-18 J105L18 J105L-18 J107L18 J107L-18 J107LTA J106L18 J106LTA
Description Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
Maker Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum drain-source on-resistance 6 Ω 3 Ω 3 Ω 8 Ω 8 Ω 8 Ω 6 Ω 6 Ω
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 35 pF 35 pF 35 pF 35 pF 35 pF 35 pF 35 pF 35 pF
JEDEC-95 code TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 135 °C 150 °C 135 °C 150 °C 150 °C 135 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 0.36 W 0.36 W 0.36 W 0.36 W 0.36 W 0.36 W 0.36 W 0.36 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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