Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
Parameter Name | Attribute value |
Maker | Vishay |
package instruction | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown |
Configuration | SINGLE |
Maximum drain-source on-resistance | 6 Ω |
FET technology | JUNCTION |
Maximum feedback capacitance (Crss) | 35 pF |
JEDEC-95 code | TO-226AA |
JESD-30 code | O-PBCY-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 0.36 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | THROUGH-HOLE |
Terminal location | BOTTOM |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
J106L-18 | J105L18 | J105L-18 | J107L18 | J107L-18 | J107LTA | J106L18 | J106LTA | |
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Description | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA |
Maker | Vishay | Vishay | Vishay | Vishay | Vishay | Vishay | Vishay | Vishay |
package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum drain-source on-resistance | 6 Ω | 3 Ω | 3 Ω | 8 Ω | 8 Ω | 8 Ω | 6 Ω | 6 Ω |
FET technology | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
Maximum feedback capacitance (Crss) | 35 pF | 35 pF | 35 pF | 35 pF | 35 pF | 35 pF | 35 pF | 35 pF |
JEDEC-95 code | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA |
JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
Maximum operating temperature | 150 °C | 135 °C | 150 °C | 135 °C | 150 °C | 150 °C | 135 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum power consumption environment | 0.36 W | 0.36 W | 0.36 W | 0.36 W | 0.36 W | 0.36 W | 0.36 W | 0.36 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |