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SS28

Description
2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size217KB,3 Pages
ManufacturerPFS
Websitehttp://www.ps-pfs.com/ENG/main.asp
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SS28 Overview

2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA

SS28 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMB, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage80 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current50 A
SS22-S210
SS22 - S210
Features
Glass passivated junctions.
High current capability, low V
F
.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
22
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
20
23
30
24
40
Value
25
50
26
60
2.0
50
-65 to +150
-65 to +125
28
80
29
90
210
100
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient *
Value
1.3
75
Units
W
°C/W
*
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
V
F
I
R
T
A
= 25°C unless otherwise noted
Parameter
22
Forward Voltage @ 2.0 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 100°C
23
500
24
Device
25
26
0.4
10
28
29
850
210
700
Units
mV
mA
mA
2001
Fairchild Semiconductor Corporation
SS22-S210, Rev. C
Web Site: WWW.PS-PFS.COM

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Description 2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC RECTIFIER DIODE 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AA
Number of terminals 2 - 2 - 2 2 -
Number of components 1 - 1 - 1 1 -
Processing package description Plastic, SMB, 2 PIN - Plastic, SMAJ, 2 PIN - SMB, 2 PIN Plastic, SMB, 2 PIN -
state ACTIVE - DISCONTINUED ACTIVE ACTIVE TRANSFERRED -
packaging shape Rectangle - Rectangle - Rectangle Rectangle -
Package Size SMALL OUTLINE - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE -
surface mount Yes - Yes - Yes Yes -
Terminal form C BEND - C BEND - C BEND C BEND -
Terminal location pair - pair - pair pair -
Packaging Materials Plastic/Epoxy - Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy -
Craftsmanship SCHOTTKY - SCHOTTKY - SCHOTTKY SCHOTTKY -
structure single - single - single single -
Diode component materials silicon - silicon - silicon silicon -
Diode type rectifier diode - rectifier diode rectifier diode rectifier diode rectifier diode -
application EFFICIENCY - GENERAL PURPOSE - GENERAL PURPOSE EFFICIENCY -
Phase 1 - 1 - 1 1 -
Maximum repetitive peak reverse voltage 80 V - 30 V - 60 V 50 V -
Maximum average forward current 2 A - 2 A - 2 A 2 A -
Maximum non-repetitive peak forward current 50 A - 50 A - 50 A 75 A -
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