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HS1FF3

Description
Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size1MB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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HS1FF3 Overview

Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

HS1FF3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codecompli
Other featuresFREE WHEELING DIODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Download Datasheet
HS1A THRU HS1M
Surface Mount High Efficient Rectifier
Features
RoHS
COMPLIANT
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Super fast reverse recovery time
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °
C
Typical Applications
For use in high frequency rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, and telecommunication.
Mechanical Data
Package:
DO-
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, Resistance load, Ta (FIG.1)
Surge(non-repetitive)forward current
@ 60Hz Half-sine wave,1 cycle, Ta=25℃
Storage temperature
Junction temperature
VRRM
IO
V
A
SYMBOL
UNIT
HS1A
HS1A
50
HS1B
HS1B
100
HS1D
HS1D
200
HS1F
HS1F
300
1.0
HS1G
HS1G
400
HS1J
HS1J
600
HS1K
HS1K
800
HS1M
HS1M
1000
IFSM
Tstg
Tj
A
30
-55~+150
-55 ~ +150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum reverse recovery time
SYMBOL UNIT
VF
V
TEST
CONDITIONS
IFM=1.0A
I
F
=0.5A,I
R
=1.0A,
I
rr
=0.25A
Ta=25℃
IRRM
μA
Ta=125℃
100
HS1A
HS1B
HS1D
HS1F
HS1G
HS1J
HS1K
HS1M
1.0
1.3
1.7
T
RR
ns
50
5
75
Maximum DC reverse current at
rated DC blocking voltage per diode
@ VRM=VRRM
1/4
S-S062
Rev. 2.3, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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