2SC4810-L datasheet, PDF - EEWORLD Datasheet

2SC4810-L: Description5A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size238KB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SC4810-L Overview

5A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	100 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	4000
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.8 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	2SC4810-L	2SC4810-K	2SC4810-M
Description	5A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3	5A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3	5A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	5 A	5 A	5 A
Collector-emitter maximum voltage	100 V	100 V	100 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	4000	8000	2000
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	1.8 W	1.8 W	1.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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