SKIIP82AC12 datasheet, PDF - EEWORLD Datasheet

SKIIP82AC12: DescriptionInsulated Gate Bipolar Transistor, 95A I(C), 1200V V(BR)CES, N-Channel, CASE M8, MINISKIIP-27; CategoryDiscrete semiconductor The transistor; File Size274KB，5 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

Download Datasheet Parametric View All

SKIIP82AC12 Overview

Insulated Gate Bipolar Transistor, 95A I(C), 1200V V(BR)CES, N-Channel, CASE M8, MINISKIIP-27

Parameter Name	Attribute value
Maker	SEMIKRON
package instruction	SPECIAL SHAPE, R-XXSS-X27
Contacts	27
Manufacturer packaging code	CASE M8
Reach Compliance Code	unknown
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Maximum collector current (IC)	95 A
Collector-emitter maximum voltage	1200 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XXSS-X27
Number of components	6
Number of terminals	27
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SPECIAL SHAPE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	520 ns
Nominal on time (ton)	105 ns
VCEsat-Max	3 V

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components