APT5040AN datasheet, PDF - EEWORLD Datasheet

APT5040AN: DescriptionPower Field-Effect Transistor, 14.5A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3; CategoryDiscrete semiconductor The transistor; File Size204KB，4 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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APT5040AN Overview

Power Field-Effect Transistor, 14.5A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ADPOW
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	14.5 A
Maximum drain current (ID)	14.5 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	198 W
Maximum power dissipation(Abs)	198 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

	APT5040AN	APT4540AN	APT5050AN	APT4550AN
Description	Power Field-Effect Transistor, 14.5A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 13A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	ADPOW	ADPOW	ADPOW	ADPOW
Reach Compliance Code	unknown	unknown	unknown	unknown
Configuration	SINGLE	Single	SINGLE	Single
Maximum drain current (Abs) (ID)	14.5 A	14.5 A	13 A	13 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	198 W	198 W	198 W	198 W
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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