Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | ADPOW |
package instruction | , |
Reach Compliance Code | unknown |
Configuration | Single |
Maximum drain current (Abs) (ID) | 13 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-609 code | e0 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 198 W |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
APT4550AN | APT4540AN | APT5050AN | APT5040AN | |
---|---|---|---|---|
Description | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 13A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | Power Field-Effect Transistor, 14.5A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
Maker | ADPOW | ADPOW | ADPOW | ADPOW |
Reach Compliance Code | unknown | unknown | unknown | unknown |
Configuration | Single | Single | SINGLE | SINGLE |
Maximum drain current (Abs) (ID) | 13 A | 14.5 A | 13 A | 14.5 A |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-609 code | e0 | e0 | e0 | e0 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | 198 W | 198 W | 198 W | 198 W |
surface mount | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |