2SC4938
Transistors
High-voltage Switching Transistor
(400V, 5A)
2SC4938
!Features
1) Low V
CE(sat)
. (Typ. 0.6V at I
C
/ I
B
=5/1A)
2) Fast switching. (tf :Max.1µs at I
C
=4A)
3) Wide SOA. (safe operating area)
!
External dimensions
(Units : mm)
13.1
3.2
(3) (2) (1)
5.08
2.54
1.24
0.78
8.8
10.1
ROHM : PSD3
EIAJ : SC-83A
0.5Min.
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
400
400
7
5
7
1.5
35
150
-55~+150
Unit
V
V
V
A
A
W
W(Tc=25˚C)
˚C
˚C
∗
∗
Single pulse, Pw=100ms.
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SC4938
PSD3
B
TL
1000
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
ton
tstg
tf
Min.
400
400
7
-
-
-
-
25
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
15
80
-
-
-
Max.
-
-
-
10
10
1
1.5
50
-
-
1
2.5
1
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
µs
µs
µs
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=400V
V
EB
=5V
I
C
/I
B
=5A/1A
I
C
/I
B
=5A/1A
V
CE
/I
C
=5V/2A
V
CB
=10V,
I
E
=-0.5A,
f=5MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
I
C
=4A
, R
L
=50Ω
I
B1
=-I
B2
=0.4A
V
CC
200V
Conditions
0to0.3
(1) Base
(2) Collector
(3) Emitter
1.3
0.4
1.3
∗
∗
∗
∗
Measured using pulse current.
4.5