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2SC4938TL/B

Description
5A, 400V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size51KB,1 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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2SC4938TL/B Overview

5A, 400V, NPN, Si, POWER TRANSISTOR

2SC4938TL/B Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment35 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Maximum off time (toff)3500 ns
Maximum opening time (tons)1000 ns
VCEsat-Max1 V
Base Number Matches1
2SC4938
Transistors
High-voltage Switching Transistor
(400V, 5A)
2SC4938
!Features
1) Low V
CE(sat)
. (Typ. 0.6V at I
C
/ I
B
=5/1A)
2) Fast switching. (tf :Max.1µs at I
C
=4A)
3) Wide SOA. (safe operating area)
!
External dimensions
(Units : mm)
13.1
3.2
(3) (2) (1)
5.08
2.54
1.24
0.78
8.8
10.1
ROHM : PSD3
EIAJ : SC-83A
0.5Min.
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
400
400
7
5
7
1.5
35
150
-55~+150
Unit
V
V
V
A
A
W
W(Tc=25˚C)
˚C
˚C
Single pulse, Pw=100ms.
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SC4938
PSD3
B
TL
1000
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
ton
tstg
tf
Min.
400
400
7
-
-
-
-
25
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
15
80
-
-
-
Max.
-
-
-
10
10
1
1.5
50
-
-
1
2.5
1
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
µs
µs
µs
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=400V
V
EB
=5V
I
C
/I
B
=5A/1A
I
C
/I
B
=5A/1A
V
CE
/I
C
=5V/2A
V
CB
=10V,
I
E
=-0.5A,
f=5MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
I
C
=4A
, R
L
=50Ω
I
B1
=-I
B2
=0.4A
V
CC
200V
Conditions
0to0.3
(1) Base
(2) Collector
(3) Emitter
1.3
0.4
1.3
Measured using pulse current.
4.5

2SC4938TL/B Related Products

2SC4938TL/B 2SC4938TLB
Description 5A, 400V, NPN, Si, POWER TRANSISTOR Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, SC-83A, 3 PIN
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow unknow
Maximum collector current (IC) 5 A 5 A
Collector-emitter maximum voltage 400 V 400 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 25
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Maximum power consumption environment 35 W 35 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz
Maximum off time (toff) 3500 ns 3500 ns
Maximum opening time (tons) 1000 ns 1000 ns
VCEsat-Max 1 V 1 V
Base Number Matches 1 1

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