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K4M56323PG-FF75

Description
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90
Categorystorage    storage   
File Size145KB,12 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4M56323PG-FF75 Overview

Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90

K4M56323PG-FF75 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionFBGA, BGA90,9X15,32
Reach Compliance Codecompliant
Maximum access time6 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B90
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Humidity sensitivity level1
Number of terminals90
word count8388608 words
character code8000000
Maximum operating temperature70 °C
Minimum operating temperature-25 °C
organize8MX32
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA90,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Peak Reflow Temperature (Celsius)225
power supply1.8 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length1,2,4,8,FP
Maximum standby current0.0003 A
Maximum slew rate0.14 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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