Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | SAMSUNG |
package instruction | FBGA, BGA90,9X15,32 |
Reach Compliance Code | compliant |
Maximum access time | 6 ns |
Maximum clock frequency (fCLK) | 133 MHz |
I/O type | COMMON |
interleaved burst length | 1,2,4,8 |
JESD-30 code | R-PBGA-B90 |
memory density | 268435456 bit |
Memory IC Type | SYNCHRONOUS DRAM |
memory width | 32 |
Humidity sensitivity level | 1 |
Number of terminals | 90 |
word count | 8388608 words |
character code | 8000000 |
Maximum operating temperature | 70 °C |
Minimum operating temperature | -25 °C |
organize | 8MX32 |
Package body material | PLASTIC/EPOXY |
encapsulated code | FBGA |
Encapsulate equivalent code | BGA90,9X15,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, FINE PITCH |
Peak Reflow Temperature (Celsius) | 225 |
power supply | 1.8 V |
Certification status | Not Qualified |
refresh cycle | 4096 |
Continuous burst length | 1,2,4,8,FP |
Maximum standby current | 0.0003 A |
Maximum slew rate | 0.14 mA |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | OTHER |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |