Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1515340973 |
| Parts packaging code | DIP |
| package instruction | IN-LINE, R-PDIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| YTEOL | 0 |
| Configuration | SINGLE |
| Maximum drain current (ID) | 0.02 A |
| Maximum drain-source on-resistance | 250 Ω |
| FET technology | JUNCTION |
| JESD-30 code | R-PDIP-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | DEPLETION MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.25 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| 2SK1806 | 2SK1806D | 2SK1806E | 2SK1806C | |
|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN |
| Objectid | 1515340973 | 1938019457 | 1938019458 | 1938019456 |
| Parts packaging code | DIP | DIP | DIP | DIP |
| package instruction | IN-LINE, R-PDIP-T3 | IN-LINE, R-PDIP-T3 | IN-LINE, R-PDIP-T3 | IN-LINE, R-PDIP-T3 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum drain current (ID) | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
| Maximum drain-source on-resistance | 250 Ω | 250 Ω | 250 Ω | 250 Ω |
| FET technology | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
| JESD-30 code | R-PDIP-T3 | R-PDIP-T3 | R-PDIP-T3 | R-PDIP-T3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.25 W | 0.25 W | 0.25 W | 0.25 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Maximum operating temperature | - | 150 °C | 150 °C | 150 °C |
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