BSS192,135 datasheet, PDF - EEWORLD Datasheet

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BSS192,135: DescriptionBSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin; CategoryDiscrete semiconductor The transistor; File Size369KB，16 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com

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BSS192,135 Overview

BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin

BSS192,135 Parametric

Parameter Name	Attribute value
Brand Name	Nexperia
Maker	Nexperia
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Manufacturer packaging code	SOT89
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	240 V
Maximum drain current (ID)	0.2 A
Maximum drain-source on-resistance	12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	15 pF
JEDEC-95 code	TO-243AA
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Guideline	IEC-60134
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

BSS192,135 Related Products

	BSS192,135	BSS192,115
Description	BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin	Drain-source voltage (Vdss): 240V Continuous drain current (Id) (at 25°C): 200mA Gate-source threshold voltage: 2.8V @ 1mA Drain-source on-resistance: 12Ω @ 200mA, 10V Maximum power dissipation (Ta =25°C): 560mW Type: P-channel MOSFET P-CH
Brand Name	Nexperia	Nexperia
Maker	Nexperia	Nexperia
Parts packaging code	SOT-89	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Contacts	3	3
Manufacturer packaging code	SOT89	SOT89
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	240 V	240 V
Maximum drain current (ID)	0.2 A	0.2 A
Maximum drain-source on-resistance	12 Ω	12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	15 pF	15 pF
JEDEC-95 code	TO-243AA	TO-243AA
JESD-30 code	R-PSSO-F3	R-PSSO-F3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL
Guideline	IEC-60134	IEC-60134
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	FLAT	FLAT
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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