Drain-source voltage (Vdss): 240V Continuous drain current (Id) (at 25°C): 200mA Gate-source threshold voltage: 2.8V @ 1mA Drain-source on-resistance: 12Ω @ 200mA, 10V Maximum power dissipation (Ta =25°C): 560mW Type: P-channel MOSFET P-CH
| Parameter Name | Attribute value |
| Brand Name | Nexperia |
| Maker | Nexperia |
| Parts packaging code | SOT-89 |
| package instruction | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 |
| Manufacturer packaging code | SOT89 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 240 V |
| Maximum drain current (ID) | 0.2 A |
| Maximum drain-source on-resistance | 12 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 15 pF |
| JEDEC-95 code | TO-243AA |
| JESD-30 code | R-PSSO-F3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Guideline | IEC-60134 |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| BSS192,115 | BSS192,135 | |
|---|---|---|
| Description | Drain-source voltage (Vdss): 240V Continuous drain current (Id) (at 25°C): 200mA Gate-source threshold voltage: 2.8V @ 1mA Drain-source on-resistance: 12Ω @ 200mA, 10V Maximum power dissipation (Ta =25°C): 560mW Type: P-channel MOSFET P-CH | BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin |
| Brand Name | Nexperia | Nexperia |
| Maker | Nexperia | Nexperia |
| Parts packaging code | SOT-89 | SOT-89 |
| package instruction | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 | 3 |
| Manufacturer packaging code | SOT89 | SOT89 |
| Reach Compliance Code | compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 240 V | 240 V |
| Maximum drain current (ID) | 0.2 A | 0.2 A |
| Maximum drain-source on-resistance | 12 Ω | 12 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 15 pF | 15 pF |
| JEDEC-95 code | TO-243AA | TO-243AA |
| JESD-30 code | R-PSSO-F3 | R-PSSO-F3 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL | P-CHANNEL |
| Guideline | IEC-60134 | IEC-60134 |
| surface mount | YES | YES |
| Terminal surface | Tin (Sn) | Tin (Sn) |
| Terminal form | FLAT | FLAT |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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