ATF-10136-TR1 datasheet, PDF - EEWORLD Datasheet

ATF-10136-TR1: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size100KB，3 Pages; ManufacturerHewlett Packard Co.

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ATF-10136-TR1 Overview

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

Parameter Name	Attribute value
Maker	Hewlett Packard Co.
package instruction	MICROWAVE, S-CXMW-F4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	5 V
Maximum drain current (ID)	0.18 A
FET technology	METAL SEMICONDUCTOR
highest frequency band	X BAND
JESD-30 code	S-CXMW-F4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE
Package form	MICROWAVE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.43 W
Minimum power gain (Gp)	12 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	UNSPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

	ATF-10136-TR1	ATF-10136-STR
Description	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Maker	Hewlett Packard Co.	Hewlett Packard Co.
package instruction	MICROWAVE, S-CXMW-F4	MICROWAVE, S-CXMW-F4
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	5 V	5 V
Maximum drain current (ID)	0.18 A	0.18 A
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
highest frequency band	X BAND	X BAND
JESD-30 code	S-CXMW-F4	S-CXMW-F4
Number of components	1	1
Number of terminals	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	175 °C	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE	SQUARE
Package form	MICROWAVE	MICROWAVE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	0.43 W	0.43 W
Minimum power gain (Gp)	12 dB	12 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	UNSPECIFIED	UNSPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE

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