APT901R3BN-GULLWING datasheet, PDF

APT901R3BN-GULLWING: DescriptionPower Field-Effect Transistor, 10A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size160KB，4 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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APT901R3BN-GULLWING Overview

Power Field-Effect Transistor, 10A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

Parameter Name	Attribute value
Maker	ADPOW
package instruction	FLANGE MOUNT, R-PSFM-G3
Reach Compliance Code	unknown
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	1.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	160 pF
JESD-30 code	R-PSFM-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	310 W
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Maximum off time (toff)	143 ns
Maximum opening time (tons)	62 ns

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