LS3550 SERIES
MONOLITHIC DUAL
PNP TRANSISTORS
FEATURES
6 LEAD SOT-23 SURFACE MOUNT PACKAGE*
TIGHT MATCHING
1
EXCELLENT THERMAL TRACKING
1
ABSOLUTE MAXIMUM RATINGS
2
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltages
Collector to Collector Voltage
60V
50mA
TBD
-55 to +150 °C
-55 to +150 °C
2mV
3µV/°C
B1
E2
B2
SOT-23
TOP VIEW
TOP VIEW
1
2
3
6
5
4
*SOT-23
TO-78
TOP VIEW
C1
E1
C2
TO-71
TOP VIEW
C1
B1
E1
NC
1
2
3
4
PDIP
TOP VIEW
PDIP
8
7
6
5
SOIC
TOP VIEW
SOIC
C2
B2
E2
C1
B1
E1
1
2
3
4
8
7
6
5
C2
B2
E2
NC
NC
NC
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL
V
BE1
V
BE2
CHARACTERISTIC
Base to Emitter Voltage Differential
Base to Emitter Voltage Differential
Change with Temperature
Base Current Differential
Base Current Differential
Change with Temperature
Current Gain Differential
LS3550A
MIN
MAX
2
3
10
0.5
10
LS3550B
MIN
MAX
5
5
10
0.5
10
LS3550C
MIN
MAX
10
15
10
1.0
15
UNIT
mV
µV/°C
nA
nA/°C
%
CONDITIONS
I
C
= -100µA, V
CE
= -5V
I
C
= -100µA, V
CE
= -5V
T
A
= -40°C to +85°C
I
C
= -500µA, V
CE
= -5V
I
C
= -500µA, V
CE
= -5V
T
A
= -40°C to +85°C
I
C
= -1mA, V
CE
= -5V
V
BE1
V
BE2
ΔT
I
B1
I
B2
I
B1
I
B2
ΔT
h
FE1
h
FE2
ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL
BV
CBO
BV
CEO
BV
CCO
BV
EBO
V
CE(SAT)
CHARACTERISTIC
Collector to Base Breakdown Voltage
LS3550A
MIN
-45
MAX
LS3550B
MIN
-40
-40
±60
-6.0
-0.50
-0.50
MAX
LS3550C
MIN
-20
-20
±60
-6.0
-1.2
V
MAX
UNIT
15
16
CONDITIONS
I
C
= -10µA, I
E
= 0A
I
C
= -5mA, I
B
= 0A
I
CC
= -±1µA, I
B
=I
C
=0A
I
E
= -10µA, I
C
= 0A
I
C
= -10mA
I
B
= -1mA
Collector to Emitter Breakdown Voltage -45
Collector to Collector Breakdown
±60
Voltage
Emitter to Base Breakdown Voltage
3
-6.0
Collector to Emitter Saturation Voltage
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201129 05/21/2014 Rev#A4 ECN#LS3550
ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
LS3550A
MIN
150
h
FE
DC Current Gain
120
100
I
CBO
I
EBO
I
C1C2
C
OBO
f
T
NF
Collector Cutoff Current
Emitter Cutoff Current
Collector to Collector Leakage Current
Output Capacitance
Gain Bandwidth Product (Current)
Noise Figure (Narrow Band)
-0.35
MAX
LS3550B
MIN
100
80
60
-0.35
-0.35
-0.35
±1
2
600
3
-0.35
±1
2
600
3
-0.35
±1
2
600
3
µA
pF
MHz
dB
nA
MAX
LS3550C
MIN
50
40
30
MAX
UNIT
CONDITIONS
I
C
= -1mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
I
C
= -50mA, V
CE
= -5V
I
E
= 0A, V
CB
= -30V
I
E
= 0A, V
CB
= -20V
I
E
= 0A, V
CB
= -3V
V
CC
= ±60V, I
B
=I
C
=0A
I
E
= 0A, V
CB
= -10V
I
C
= -1mA, V
CE
= -5V
I
C
= -100µA, V
CE
= -5V
BW = 200Hz
R
B
= 10Ω,
f
= 1kHz
SOT-23
SOT-23
0.95
TO-71
0.35
0.50
2.80
3.00
TO-78
0.060
1
2
PDIP
PDIP
8
7
0.100
1
1.90
6
5
0.375
2
0.210
0.170
0.038
3
4
6
5
3
4
1.50
1.75
2.60
3.00
0.09
0.20
0.250
*
0.90
1.30
0.145
0.170
0.295
0.320
DIMENSIONS IN
INCHES
SOIC
SOIC
0.00
0.15
0.10
0.60
DIMENSIONS IN
MILLIMETERS
0.014
0.018
1
2
8
7
0.050
0.189
0.196
0.021
3
4
6
5
0.150
0.157
*Standard package is SOT-23 6 lead. Other packages listed
are optional. Contact factory regarding availability of optional
packages.
0.0040
0.0098
0.2284
0.2440
DIMENSIONS IN
INCHES
0.0075
0.0098
NOTES
1.
2.
3.
Maximum rating for LS3550A, SOT23-6.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
The reverse Base-to-Emitter voltage must never exceed -6.0 Volts. The reverse Base-to-Emitter current must never exceed -10µA.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201129 05/21/2014 Rev#A4 ECN#LS3550
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