Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
Parameter Name | Attribute value |
Parts packaging code | TO-5 |
package instruction | CYLINDRICAL, O-MBCY-W3 |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum collector current (IC) | 1 A |
Collector-emitter maximum voltage | 50 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 40 |
JEDEC-95 code | TO-5 |
JESD-30 code | O-MBCY-W3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 175 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 5 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | WIRE |
Terminal location | BOTTOM |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 60 MHz |
Base Number Matches | 1 |