2N5614 datasheet, PDF - EEWORLD Datasheet

2N5614: DescriptionPower Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2; CategoryDiscrete semiconductor The transistor; File Size71KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	60 V
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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