BDW46AK datasheet, PDF - EEWORLD Datasheet

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BDW46AK: Description15A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size382KB，62 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BDW46AK Overview

15A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BDW46AK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TO-220AB
package instruction	PLASTIC, TO-220AB, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	250
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Darlington Complementary

Silicon Power Transistors

. . . designed for general purpose and low speed switching applications.

•

High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc.

•

Collector Emitter Sustaining Voltage @ 30 mAdc:

VCEO(sus) = 80 Vdc (min.) — BDW46

VCEO(sus) =

100 Vdc (min.) — BDW42/BDW47

•

Low Collector Emitter Saturation Voltage

VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc

VCE(sat) =

3.0 Vdc (max.) @ IC = 10.0 Adc

•

Monolithic Construction with Built–In Base Emitter Shunt resistors

•

TO–220AB Compact Package

BDW42*

BDW46

BDW47*

*Motorola Preferred Device

NPN

PNP

MAXIMUM RATINGS

DARLINGTON

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80 – 100 VOLTS

85 WATTS

PD, POWER DISSIPATION (WATTS)

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Rating

Symbol

VCEO

VCB

VEB

BDW46

BDW42

BDW47

100

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

5.0

Collector Current — Continuous

Base Current

0.5

Total Device Dissipation

@ TC = 25

Derate above 25

0.68

Watts

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to + 150

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

θJC

Max

Unit

Thermal Resistance, Junction to Case

1.47

C/W

100

125

150

TC, CASE TEMPERATURE (°C)

Figure 1. Power Temperature Derating Curve

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 7

3–212

Motorola Bipolar Power Transistor Device Data

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