RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN
Parameter Name | Attribute value |
Maker | UNISONIC TECHNOLOGIES CO.,LTD |
Parts packaging code | SOT-23 |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Maximum collector current (IC) | 0.05 A |
Collector-based maximum capacity | 1.7 pF |
Collector-emitter maximum voltage | 15 V |
Configuration | SINGLE |
highest frequency band | VERY HIGH FREQUENCY BAND |
JESD-30 code | R-PDSO-G3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | NPN |
surface mount | YES |
Terminal surface | TIN LEAD |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 1100 MHz |
MMBT9018-I-AE3-R | MMBT9018-D-AE3-R | MMBT9018-E-AN3-R | MMBT9018-H-AE3-R | MMBT9018-J-AN3-R | MMBT9018-F-AN3-R | MMBT9018-E-AE3-R | |
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Description | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-523, 3 PIN | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-523, 3 PIN | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-523, 3 PIN | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN |
Parts packaging code | SOT-23 | SOT-23 | SOT | SOT-23 | SOT | SOT | SOT-23 |
package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
Collector-based maximum capacity | 1.7 pF | 1.7 pF | 1.7 pF | 1.7 pF | 1.7 pF | 1.7 pF | 1.7 pF |
Collector-emitter maximum voltage | 15 V | 15 V | 15 V | 15 V | 15 V | 15 V | 15 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
highest frequency band | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
surface mount | YES | YES | YES | YES | YES | YES | YES |
Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 1100 MHz | 1100 MHz | 1100 MHz | 1100 MHz | 1100 MHz | 1100 MHz | 1100 MHz |
Maker | UNISONIC TECHNOLOGIES CO.,LTD | - | - | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |