DDR DRAM, 512MX4, 0.3ns, CMOS, PBGA78,
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | SAMSUNG |
| Reach Compliance Code | unknown |
| Maximum access time | 0.3 ns |
| Maximum clock frequency (fCLK) | 533 MHz |
| I/O type | COMMON |
| interleaved burst length | 8 |
| JESD-30 code | R-PBGA-B78 |
| JESD-609 code | e1 |
| memory density | 2147483648 bit |
| Memory IC Type | DDR DRAM |
| memory width | 4 |
| Humidity sensitivity level | 3 |
| Number of terminals | 78 |
| word count | 536870912 words |
| character code | 512000000 |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | |
| organize | 512MX4 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | FBGA |
| Encapsulate equivalent code | BGA78,9X13,32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, FINE PITCH |
| power supply | 1.5 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| Continuous burst length | 8 |
| Maximum standby current | 0.012 A |
| Maximum slew rate | 0.21 mA |
| Nominal supply voltage (Vsup) | 1.5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| Base Number Matches | 1 |
| K4B2G0446B-HCF8T | K4B2G0846B-HCF8T | K4B2G1646B-HCF8T | |
|---|---|---|---|
| Description | DDR DRAM, 512MX4, 0.3ns, CMOS, PBGA78, | DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA78, | DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96, |
| Is it Rohs certified? | conform to | conform to | conform to |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG |
| Reach Compliance Code | unknown | unknown | unknown |
| Maximum access time | 0.3 ns | 0.3 ns | 0.3 ns |
| Maximum clock frequency (fCLK) | 533 MHz | 533 MHz | 533 MHz |
| I/O type | COMMON | COMMON | COMMON |
| interleaved burst length | 8 | 8 | 8 |
| JESD-30 code | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B96 |
| JESD-609 code | e1 | e1 | e1 |
| memory density | 2147483648 bit | 2147483648 bit | 2147483648 bit |
| Memory IC Type | DDR DRAM | DDR DRAM | DDR DRAM |
| memory width | 4 | 8 | 16 |
| Humidity sensitivity level | 3 | 3 | 3 |
| Number of terminals | 78 | 78 | 96 |
| word count | 536870912 words | 268435456 words | 134217728 words |
| character code | 512000000 | 256000000 | 128000000 |
| Maximum operating temperature | 85 °C | 85 °C | 85 °C |
| organize | 512MX4 | 256MX8 | 128MX16 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | FBGA | FBGA | FBGA |
| Encapsulate equivalent code | BGA78,9X13,32 | BGA78,9X13,32 | BGA96,9X16,32 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH |
| power supply | 1.5 V | 1.5 V | 1.5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 8192 | 8192 | 8192 |
| Continuous burst length | 8 | 8 | 8 |
| Maximum standby current | 0.012 A | 0.012 A | 0.012 A |
| Maximum slew rate | 0.21 mA | 0.23 mA | 0.28 mA |
| Nominal supply voltage (Vsup) | 1.5 V | 1.5 V | 1.5 V |
| surface mount | YES | YES | YES |
| technology | CMOS | CMOS | CMOS |
| Temperature level | OTHER | OTHER | OTHER |
| Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | BALL | BALL | BALL |
| Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Base Number Matches | 1 | 1 | - |
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