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MSC2310-10YS9

Description
Page Mode DRAM, 1MX9, 100ns, MOS, CSMA30
Categorystorage    storage   
File Size816KB,12 Pages
ManufacturerLAPIS Semiconductor Co., Ltd.
Download Datasheet Parametric Compare View All

MSC2310-10YS9 Overview

Page Mode DRAM, 1MX9, 100ns, MOS, CSMA30

MSC2310-10YS9 Parametric

Parameter NameAttribute value
MakerLAPIS Semiconductor Co., Ltd.
package instructionSIMM, SIM30
Reach Compliance Codeunknown
Maximum access time100 ns
I/O typeCOMMON
JESD-30 codeR-XSMA-N30
memory density9437184 bit
Memory IC TypePAGE MODE DRAM
memory width9
Number of terminals30
word count1048576 words
character code1000000
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX9
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeSIMM
Encapsulate equivalent codeSIM30
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
refresh cycle512
Maximum slew rate0.675 mA
surface mountNO
technologyMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch2.54 mm
Terminal locationSINGLE

MSC2310-10YS9 Related Products

MSC2310-10YS9 MSC2310-12YS9
Description Page Mode DRAM, 1MX9, 100ns, MOS, CSMA30 Page Mode DRAM, 1MX9, 120ns, MOS, CSMA30
Maker LAPIS Semiconductor Co., Ltd. LAPIS Semiconductor Co., Ltd.
package instruction SIMM, SIM30 SIMM, SIM30
Reach Compliance Code unknown unknown
Maximum access time 100 ns 120 ns
I/O type COMMON COMMON
JESD-30 code R-XSMA-N30 R-XSMA-N30
memory density 9437184 bit 9437184 bit
Memory IC Type PAGE MODE DRAM PAGE MODE DRAM
memory width 9 9
Number of terminals 30 30
word count 1048576 words 1048576 words
character code 1000000 1000000
Maximum operating temperature 70 °C 70 °C
organize 1MX9 1MX9
Output characteristics 3-STATE 3-STATE
Package body material CERAMIC CERAMIC
encapsulated code SIMM SIMM
Encapsulate equivalent code SIM30 SIM30
Package shape RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified
refresh cycle 512 512
Maximum slew rate 0.675 mA 0.63 mA
surface mount NO NO
technology MOS MOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD
Terminal pitch 2.54 mm 2.54 mm
Terminal location SINGLE SINGLE
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