MSMBJ130CATR datasheet, PDF - EEWORLD Datasheet

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MSMBJ130CATR: Description600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN; CategoryDiscrete semiconductor diode; File Size162KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MSMBJ130CATR Overview

600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN

MSMBJ130CATR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	DO-214AA
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum breakdown voltage	159 V
Minimum breakdown voltage	144 V
Breakdown voltage nominal value	151.5 V
Maximum clamping voltage	209 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	1.38 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	130 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

SURFACE MOUNT 600 W

Transient Voltage Suppressor

- High Reliability controlled devices

- Unidirectional (A) and Bidirectional (CA) construction

- Available in both J-bend and Gull-wing terminations

- Selections for 5.0 to 170 V standoff voltages (V

)

LEVELS

M, MA, MX, MXL

DEVICES

MSMBJ5.0A thru MSMBJ170CA, e3

and MSMBG5.0A thru MSMBG170CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Optional up screening available by replacing the M prefix with MA, MX or MXL. These

prefixes specify various screening and conformance inspection options based on

MIL-PRF-19500. Refer to

MicroNote 129

for more details on the screening options.

Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to

MP6KE200CA

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding an “e3” suffix

3σ lot norm screening performed on Standby Current I

Refer to table below

for dimensions

APPLICATIONS / BENEFITS

Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T

L, etc.

Protection from switching transients & induced RF

Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1: MSMB5.0A to MSMB120CA

Class 2: MSMB5.0A to MSMB60CA

Class 3: MSMB5.0A to MSMB30CA

Class 4: MSMB5.0A to MSMB15CA

Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:

Class 1: MSMB5.0A to MSMB36CA

Class 2: MSMB5.0A to MSMB18CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 600 watts at 10/1000

μs

(also see Figures 1, 2, and

3) with impulse repetition rate (duty factor) of 0.01 % or less

clamping

(0 volts to V

min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65 °C to +150 °C

Thermal resistance: 25 °C/W junction to lead, or 90 °C/W junction to ambient when mounted

on FR4 PC board (1oz Cu) with recommended footprint (see page 2)

Steady-State Power dissipation: 5 watts at TL = 25 ºC, or 1.38 watts at TA = 25 ºC when

mounted on FR4 PC board with recommended footprint (see page 2)

Forward Surge at 25 ºC: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01000 Rev B, Sept 2011

High Reliability Product Group

Page 1 of 4

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