DDR DRAM Module, 32MX64, 0.5ns, CMOS, LEAD FREE, MICRO, DIMM-214
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Infineon |
Parts packaging code | DIMM |
package instruction | DIMM, DIMM214,16 |
Contacts | 214 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | SINGLE BANK PAGE BURST |
Maximum access time | 0.5 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 266 MHz |
I/O type | COMMON |
JESD-30 code | R-XDMA-N214 |
memory density | 2147483648 bit |
Memory IC Type | DDR DRAM MODULE |
memory width | 64 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 214 |
word count | 33554432 words |
character code | 32000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 65 °C |
Minimum operating temperature | |
organize | 32MX64 |
Output characteristics | 3-STATE |
Package body material | UNSPECIFIED |
encapsulated code | DIMM |
Encapsulate equivalent code | DIMM214,16 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
power supply | 1.8 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
self refresh | YES |
Maximum standby current | 0.016 A |
Maximum slew rate | 0.88 mA |
Maximum supply voltage (Vsup) | 1.9 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal pitch | 0.4 mm |
Terminal location | DUAL |
HYS64T32000LM-3.7-A | HYS64T32000KM-3.7-A | HYS64T64020LM-3.7-A | HYS64T64020KM-3.7-A | |
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Description | DDR DRAM Module, 32MX64, 0.5ns, CMOS, LEAD FREE, MICRO, DIMM-214 | DDR DRAM Module, 32MX64, 0.5ns, CMOS, MICRO, DIMM-214 | DDR DRAM Module, 64MX64, 0.5ns, CMOS, LEAD FREE, MICRO, DIMM-214 | DDR DRAM Module, 64MX64, 0.5ns, CMOS, MICRO, DIMM-214 |
Is it Rohs certified? | conform to | incompatible | conform to | incompatible |
Parts packaging code | DIMM | DIMM | DIMM | DIMM |
package instruction | DIMM, DIMM214,16 | DIMM, DIMM214,16 | DIMM, DIMM214,16 | DIMM, DIMM214,16 |
Contacts | 214 | 214 | 214 | 214 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
access mode | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
Maximum access time | 0.5 ns | 0.5 ns | 0.5 ns | 0.5 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 266 MHz | 266 MHz | 266 MHz | 266 MHz |
I/O type | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-XDMA-N214 | R-XDMA-N214 | R-XDMA-N214 | R-XDMA-N214 |
memory density | 2147483648 bit | 2147483648 bit | 4294967296 bit | 4294967296 bit |
Memory IC Type | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
memory width | 64 | 64 | 64 | 64 |
Number of functions | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 |
Number of terminals | 214 | 214 | 214 | 214 |
word count | 33554432 words | 33554432 words | 67108864 words | 67108864 words |
character code | 32000000 | 32000000 | 64000000 | 64000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 65 °C | 65 °C | 65 °C | 65 °C |
organize | 32MX64 | 32MX64 | 64MX64 | 64MX64 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
encapsulated code | DIMM | DIMM | DIMM | DIMM |
Encapsulate equivalent code | DIMM214,16 | DIMM214,16 | DIMM214,16 | DIMM214,16 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
power supply | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 8192 | 8192 | 8192 | 8192 |
self refresh | YES | YES | YES | YES |
Maximum standby current | 0.016 A | 0.016 A | 0.032 A | 0.032 A |
Maximum slew rate | 0.88 mA | 0.88 mA | 0.896 mA | 0.896 mA |
Maximum supply voltage (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
Minimum supply voltage (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
surface mount | NO | NO | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal pitch | 0.4 mm | 0.4 mm | 0.4 mm | 0.4 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL |
Maker | Infineon | - | Infineon | Infineon |