CAT28C513 datasheet, PDF - EEWORLD Datasheet

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CAT28C513: Description512K-Bit CMOS PARALLEL E2PROM; File Size73KB，12 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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CAT28C513 Overview

512K-Bit CMOS PARALLEL E2PROM

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CAT28C512/513

512K-Bit CMOS PARALLEL EEPROM

FEATURES

Fast Read Access Times: 120/150 ns

Low Power CMOS Dissipation:

Automatic Page Write Operation:

–Active: 50 mA Max.

–Standby: 200

A Max.

Simple Write Operation:

–1 to 128 Bytes in 5ms

–Page Load Timer

End of Write Detection:

–On-Chip Address and Data Latches

–Self-Timed Write Cycle with Auto-Clear

Fast Write Cycle Time:

–Toggle Bit

–DATA Polling

DATA

Hardware and Software Write Protection

100,000 Program/Erase Cycles

100 Year Data Retention

Commercial, Industrial and Automotive

–5ms Max

CMOS and TTL Compatible I/O

Temperature Ranges

DESCRIPTION

The CAT28C512/513 is a fast,low power, 5V-only CMOS

parallel EEPROM organized as 64K x 8-bits. It requires

a simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V

power up/down write protection

eliminate additional timing and protection hardware.

DATA

Polling and Toggle status bits signal the start and

end of the self-timed write cycle. Additionally, the

CAT28C512/513 features hardware and software write

protection.

The CAT28C512/513 is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 100 years. The device is available in JEDEC

approved 32-pin DIP, PLCC and TSOP packages.

BLOCK DIAGRAM

ADDR. BUFFER

& LATCHES

INADVERTENT

WRITE

PROTECTION

ROW

DECODER

65,536 x 8

EEPROM

ARRAY

128 BYTE PAGE

A7–A15

VCC

HIGH VOLTAGE

GENERATOR

CONTROL

I/O BUFFERS

TIMER

DATA POLLING

AND

TOGGLE BIT

COLUMN

DECODER

I/O0–I/O7

A0–A6

ADDR. BUFFER

& LATCHES

Characteristics subject to change without notice

Doc. No. MD-1007, Rev. I

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