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HYMD212G726S4M-K

Description
DDR DRAM Module, 128MX72, 0.75ns, CMOS, 5.250 X 1.200 X 0.150 INCH, DIMM-184
Categorystorage    storage   
File Size198KB,16 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
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HYMD212G726S4M-K Overview

DDR DRAM Module, 128MX72, 0.75ns, CMOS, 5.250 X 1.200 X 0.150 INCH, DIMM-184

HYMD212G726S4M-K Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeDIMM
package instructionDIMM, DIMM184
Contacts184
Reach Compliance Codecompliant
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
memory density9663676416 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals184
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current1.37 A
Maximum slew rate6.86 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL

HYMD212G726S4M-K Related Products

HYMD212G726S4M-K HYMD212G726LS4M-L HYMD212G726S4M-L HYMD212G726S4M-H HYMD212G726LS4M-H HYMD212G726LS4M-K
Description DDR DRAM Module, 128MX72, 0.75ns, CMOS, 5.250 X 1.200 X 0.150 INCH, DIMM-184 DDR DRAM Module, 128MX72, 0.8ns, CMOS, 5.250 X 1.200 X 0.150 INCH, DIMM-184 DDR DRAM Module, 128MX72, 0.8ns, CMOS, 5.250 X 1.200 X 0.150 INCH, DIMM-184 DDR DRAM Module, 128MX72, 0.75ns, CMOS, 5.250 X 1.200 X 0.150 INCH, DIMM-184 DDR DRAM Module, 128MX72, 0.75ns, CMOS, 5.250 X 1.200 X 0.150 INCH, DIMM-184 DDR DRAM Module, 128MX72, 0.75ns, CMOS, 5.250 X 1.200 X 0.150 INCH, DIMM-184
Maker SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix
Parts packaging code DIMM DIMM DIMM DIMM DIMM DIMM
package instruction DIMM, DIMM184 DIMM, DIMM184 DIMM, DIMM184 DIMM, DIMM184 DIMM, DIMM184 DIMM, DIMM184
Contacts 184 184 184 184 184 184
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time 0.75 ns 0.8 ns 0.8 ns 0.75 ns 0.75 ns 0.75 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz 100 MHz 100 MHz 133 MHz 133 MHz 133 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 R-XDMA-N184
memory density 9663676416 bit 9663676416 bit 9663676416 bit 9663676416 bit 9663676416 bit 9663676416 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE
memory width 72 72 72 72 72 72
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 184 184 184 184 184 184
word count 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words
character code 128000000 128000000 128000000 128000000 128000000 128000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 128MX72 128MX72 128MX72 128MX72 128MX72 128MX72
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM DIMM
Encapsulate equivalent code DIMM184 DIMM184 DIMM184 DIMM184 DIMM184 DIMM184
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192 8192
self refresh YES YES YES YES YES YES
Maximum standby current 1.37 A 1.19 A 1.19 A 1.37 A 1.37 A 1.37 A
Maximum slew rate 6.86 mA 6.41 mA 6.41 mA 6.86 mA 6.86 mA 6.86 mA
Maximum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Minimum supply voltage (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL

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