RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN
Parameter Name | Attribute value |
Maker | California Eastern Labs |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | LOW NOISE |
Maximum collector current (IC) | 0.065 A |
Collector-based maximum capacity | 0.9 pF |
Collector-emitter maximum voltage | 10 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 80 |
highest frequency band | L BAND |
JESD-30 code | R-PDSO-G3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | NPN |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 7000 MHz |
NE68119-T2 | NE68118-T2 | NE68139-T2 | NE68139R-T2 | NE68133-T2 | NE68118-T1 | NE68135-T1 | NE68133-T1 | NE68135-T2 | NE68100 | |
---|---|---|---|---|---|---|---|---|---|---|
Description | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN |
package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G4 | DISK BUTTON, O-CRDB-F4 | SMALL OUTLINE, R-PDSO-G3 | DISK BUTTON, O-CRDB-F4 | UNCASED CHIP, S-XUUC-N2 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
Maximum collector current (IC) | 0.065 A | 0.065 A | 0.065 A | 0.065 A | 0.065 A | 0.065 A | 0.065 A | 0.065 A | 0.065 A | 0.065 A |
Collector-based maximum capacity | 0.9 pF | 0.8 pF | 0.8 pF | 0.8 pF | 0.9 pF | 0.8 pF | 0.7 pF | 0.9 pF | 0.7 pF | 0.7 pF |
Collector-emitter maximum voltage | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 80 | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
highest frequency band | L BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | S BAND | ULTRA HIGH FREQUENCY BAND | S BAND | S BAND |
JESD-30 code | R-PDSO-G3 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G3 | R-PDSO-G4 | O-CRDB-F4 | R-PDSO-G3 | O-CRDB-F4 | S-XUUC-N2 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 4 | 4 | 4 | 3 | 4 | 4 | 3 | 4 | 2 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 200 °C | 150 °C | 200 °C | 200 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | ROUND | SQUARE |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | DISK BUTTON | SMALL OUTLINE | DISK BUTTON | UNCASED CHIP |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | FLAT | GULL WING | FLAT | NO LEAD |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | RADIAL | DUAL | RADIAL | UPPER |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 7000 MHz | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz |
Maker | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | - | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs |