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NE68135-T1

Description
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size482KB,12 Pages
ManufacturerCalifornia Eastern Labs
Websitehttp://www.cel.com/
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NE68135-T1 Overview

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN

NE68135-T1 Parametric

Parameter NameAttribute value
MakerCalifornia Eastern Labs
package instructionDISK BUTTON, O-CRDB-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.065 A
Collector-based maximum capacity0.7 pF
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandS BAND
JESD-30 codeO-CRDB-F4
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9000 MHz

NE68135-T1 Related Products

NE68135-T1 NE68118-T2 NE68139-T2 NE68139R-T2 NE68133-T2 NE68118-T1 NE68119-T2 NE68133-T1 NE68135-T2 NE68100
Description RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN
package instruction DISK BUTTON, O-CRDB-F4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 DISK BUTTON, O-CRDB-F4 UNCASED CHIP, S-XUUC-N2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.065 A 0.065 A 0.065 A 0.065 A 0.065 A 0.065 A 0.065 A 0.065 A 0.065 A 0.065 A
Collector-based maximum capacity 0.7 pF 0.8 pF 0.8 pF 0.8 pF 0.9 pF 0.8 pF 0.9 pF 0.9 pF 0.7 pF 0.7 pF
Collector-emitter maximum voltage 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 50 50 50 50 80 50 50 50
highest frequency band S BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND L BAND ULTRA HIGH FREQUENCY BAND S BAND S BAND
JESD-30 code O-CRDB-F4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G3 R-PDSO-G4 R-PDSO-G3 R-PDSO-G3 O-CRDB-F4 S-XUUC-N2
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 3 4 3 3 4 2
Maximum operating temperature 200 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED UNSPECIFIED
Package shape ROUND RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR ROUND SQUARE
Package form DISK BUTTON SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE DISK BUTTON UNCASED CHIP
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES YES YES
Terminal form FLAT GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING FLAT NO LEAD
Terminal location RADIAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL RADIAL UPPER
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 9000 MHz 9000 MHz 9000 MHz 9000 MHz 9000 MHz 9000 MHz 7000 MHz 9000 MHz 9000 MHz 9000 MHz
Maker California Eastern Labs California Eastern Labs California Eastern Labs California Eastern Labs - California Eastern Labs California Eastern Labs California Eastern Labs California Eastern Labs California Eastern Labs

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