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BAT63E6327

Description
Mixer Diode, Low Barrier, Silicon
CategoryDiscrete semiconductor    diode   
File Size60KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAT63E6327 Overview

Mixer Diode, Low Barrier, Silicon

BAT63E6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionANODE
ConfigurationSEPARATE, 2 ELEMENTS
Maximum diode capacitance0.85 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
JESD-30 codeR-PDSO-G4
Number of components2
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Schottky barrier typeLOW BARRIER

BAT63E6327 Related Products

BAT63E6327 BAT63E6433
Description Mixer Diode, Low Barrier, Silicon Mixer Diode, Low Barrier, Silicon
package instruction R-PDSO-G4 R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection ANODE ANODE
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Maximum diode capacitance 0.85 pF 0.85 pF
Diode component materials SILICON SILICON
Diode type MIXER DIODE MIXER DIODE
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 2 2
Number of terminals 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Schottky barrier type LOW BARRIER LOW BARRIER

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