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GM71VS17800BLT-7

Description
Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28,
Categorystorage    storage   
File Size1MB,21 Pages
ManufacturerLG Semicon Co., Ltd.
Download Datasheet Parametric Compare View All

GM71VS17800BLT-7 Overview

Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28,

GM71VS17800BLT-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLG Semicon Co., Ltd.
Reach Compliance Codeunknown
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G28
JESD-609 codee0
memory density16777216 bit
Memory IC TypeFAST PAGE DRAM
memory width8
Number of terminals28
word count2097152 words
character code2000000
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP28,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle2048
self refreshYES
Maximum standby current0.00015 A
Maximum slew rate0.11 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL

GM71VS17800BLT-7 Related Products

GM71VS17800BLT-7 GM71VS17800BLJ-6 GM71VS17800BLJ-7 GM71VS17800BLT-8
Description Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28, Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28, Fast Page DRAM, 2MX8, 80ns, CMOS, PDSO28,
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker LG Semicon Co., Ltd. LG Semicon Co., Ltd. LG Semicon Co., Ltd. LG Semicon Co., Ltd.
Reach Compliance Code unknown unknown unknown unknown
Maximum access time 70 ns 60 ns 70 ns 80 ns
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-G28 R-PDSO-J28 R-PDSO-J28 R-PDSO-G28
JESD-609 code e0 e0 e0 e0
memory density 16777216 bit 16777216 bit 16777216 bit 16777216 bit
Memory IC Type FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
memory width 8 8 8 8
Number of terminals 28 28 28 28
word count 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000 2000000
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 2MX8 2MX8 2MX8 2MX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP SOJ SOJ TSOP
Encapsulate equivalent code TSOP28,.46 SOJ28,.44 SOJ28,.44 TSOP28,.46
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE
power supply 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 2048 2048 2048 2048
self refresh YES YES YES YES
Maximum standby current 0.00015 A 0.00015 A 0.00015 A 0.00015 A
Maximum slew rate 0.11 mA 0.12 mA 0.11 mA 0.1 mA
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING J BEND J BEND GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL
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