GM71VS17800BLJ-7 datasheet, PDF

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GM71VS17800BLJ-7: DescriptionFast Page DRAM, 2MX8, 70ns, CMOS, PDSO28,; Categorystorage storage; File Size1MB，21 Pages; ManufacturerLG Semicon Co., Ltd.

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GM71VS17800BLJ-7 Overview

Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28,

GM71VS17800BLJ-7 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LG Semicon Co., Ltd.
Reach Compliance Code	unknown
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J28
JESD-609 code	e0
memory density	16777216 bit
Memory IC Type	FAST PAGE DRAM
memory width	8
Number of terminals	28
word count	2097152 words
character code	2000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ28,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	2048
self refresh	YES
Maximum standby current	0.00015 A
Maximum slew rate	0.11 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL

GM71VS17800BLJ-7 Related Products

	GM71VS17800BLJ-7	GM71VS17800BLJ-6	GM71VS17800BLT-7	GM71VS17800BLT-8
Description	Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28,	Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28,	Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28,	Fast Page DRAM, 2MX8, 80ns, CMOS, PDSO28,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	LG Semicon Co., Ltd.	LG Semicon Co., Ltd.	LG Semicon Co., Ltd.	LG Semicon Co., Ltd.
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	70 ns	60 ns	70 ns	80 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-J28	R-PDSO-J28	R-PDSO-G28	R-PDSO-G28
JESD-609 code	e0	e0	e0	e0
memory density	16777216 bit	16777216 bit	16777216 bit	16777216 bit
Memory IC Type	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM
memory width	8	8	8	8
Number of terminals	28	28	28	28
word count	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	2MX8	2MX8	2MX8	2MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOJ	SOJ	TSOP	TSOP
Encapsulate equivalent code	SOJ28,.44	SOJ28,.44	TSOP28,.46	TSOP28,.46
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	2048	2048	2048	2048
self refresh	YES	YES	YES	YES
Maximum standby current	0.00015 A	0.00015 A	0.00015 A	0.00015 A
Maximum slew rate	0.11 mA	0.12 mA	0.11 mA	0.1 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	J BEND	GULL WING	GULL WING
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL

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