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PB34F

Description
Bridge Rectifier Diode, 1 Phase, 3A, 400V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size125KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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PB34F Overview

Bridge Rectifier Diode, 1 Phase, 3A, 400V V(RRM), Silicon

PB34F Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeS-PUFM-W4
JESD-609 codee0
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature125 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED

PB34F Related Products

PB34F PB305F PB32F PB310F PB36F PB38F
Description Bridge Rectifier Diode, 1 Phase, 3A, 400V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 3A, 50V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 3A, 800V V(RRM), Silicon,
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JESD-30 code S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
JESD-609 code e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 4 4 4 4 4 4
Phase 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 50 V 200 V 1000 V 600 V 800 V
Maximum reverse recovery time 0.15 µs 0.15 µs 0.15 µs 0.5 µs 0.25 µs 0.5 µs
surface mount NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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