Bridge Rectifier Diode, 1 Phase, 3A, 400V V(RRM), Silicon
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Reach Compliance Code | unknown |
Configuration | BRIDGE, 4 ELEMENTS |
Diode component materials | SILICON |
Diode type | BRIDGE RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.3 V |
JESD-30 code | S-PUFM-W4 |
JESD-609 code | e0 |
Maximum non-repetitive peak forward current | 50 A |
Number of components | 4 |
Phase | 1 |
Number of terminals | 4 |
Maximum operating temperature | 125 °C |
Maximum output current | 3 A |
Package body material | PLASTIC/EPOXY |
Package shape | SQUARE |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 400 V |
Maximum reverse recovery time | 0.15 µs |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | WIRE |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
PB34F | PB305F | PB32F | PB310F | PB36F | PB38F | |
---|---|---|---|---|---|---|
Description | Bridge Rectifier Diode, 1 Phase, 3A, 400V V(RRM), Silicon | Bridge Rectifier Diode, 1 Phase, 3A, 50V V(RRM), Silicon, | Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon | Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon | Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon, | Bridge Rectifier Diode, 1 Phase, 3A, 800V V(RRM), Silicon, |
Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Maker | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
Configuration | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V |
JESD-30 code | S-PUFM-W4 | S-PUFM-W4 | S-PUFM-W4 | S-PUFM-W4 | S-PUFM-W4 | S-PUFM-W4 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
Maximum non-repetitive peak forward current | 50 A | 50 A | 50 A | 50 A | 50 A | 50 A |
Number of components | 4 | 4 | 4 | 4 | 4 | 4 |
Phase | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 4 | 4 | 4 | 4 | 4 | 4 |
Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
Maximum output current | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 400 V | 50 V | 200 V | 1000 V | 600 V | 800 V |
Maximum reverse recovery time | 0.15 µs | 0.15 µs | 0.15 µs | 0.5 µs | 0.25 µs | 0.5 µs |
surface mount | NO | NO | NO | NO | NO | NO |
Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |